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| BSS138W SIPMOS(R) Small-Signal-Transistor Features * N-channel * Enhancement mode * Logic level * dv /dt rated * Pb-free lead-plating; RoHS compliant Product Summary V DS R DS(on),max ID 60 3.5 0.28 V A PG-SOT-323 Type BSS138W BSS138W Package PG-SOT-323 PG-SOT-323 Tape and Reel L6327: 3000 /l L6433: 10000 Marking SWs SWs Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T A=25 C T A=70 C Pulsed drain current I D,pulse T A=25 C I D=0.28 A, V DS=48 V, di /dt =200 A/s, T j,max=150 C Value 0.28 0.22 1.12 Unit A Reverse diode dv /dt dv /dt 6 kV/s Gate source voltage ESD class (JESD22-A114-HBM) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 V GS 20 0 (<250V) V P tot T j, T stg T A=25 C 0.50 -55 ... 150 55/150/56 W C Rev. 2.41 page 1 2009-11-19 BSS138W Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - minimal footprint R thJA Values typ. max. Unit - - 250 K/W Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics V (BR)DSS V GS= 0 V, I D=250 A V GS(th) I D (off) V GS=V DS, I D=26 A V DS=60 V, V GS=0 V, T j=25 C V DS=60 V, V GS=0 V, T j=150 C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=4.5 V, I D=0.03 A Drain-source breakdown voltage Gate threshold voltage Drain-source leakage current 60 0.6 - 1.0 - 1.4 0.1 V A - - 5 - 1 3 10 4.0 nA V GS=4.5 V, I D=0.16 A V GS=10 V, I D=0.2 A Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=0.22 A 0.12 3.2 2.1 0.23 6 3.5 S Rev. 2.41 page 2 2009-11-19 BSS138W Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode continous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge IS I S,pulse V SD t rr Q rr T A=25 C V GS=0 V, I F=0.28 A, T j=25 C V R=30 V, I F=0.28 A, di F/dt =100 A/s 0.85 8.3 3.3 0.28 1.12 1.2 12.4 5 V ns nC A Q gs Q gd Qg V plateau V DD=48 V, I D=0.2 A, V GS=0 to 10 V 0.10 0.3 1.0 3.2 0.13 0.4 1.5 V nC C iss C oss Crss t d(on) tr t d(off) tf V DD=30 V, V GS=10 V, I D=0.2 A, R G=6 V GS=0 V, V DS=25 V, f =1 MHz 32 7.2 2.8 2.2 3.0 6.7 8.2 43 10 4.2 3.3 4.5 10 12 ns pF Values typ. max. Unit Rev. 2.41 page 3 2009-11-19 BSS138W 1 Power dissipation P tot=f(T A) 2 Drain current I D=f(T A); V GS10 V 0.3 0.5 0.25 0.4 0.2 P tot [W] I D [A] 0.3 0.15 0.2 0.1 0.1 0.05 0 0 40 80 120 160 0 0 40 80 120 160 T A [C] T A [C] 3 Safe operating area I D=f(V DS); T A=25 C; D =0 parameter: t p 101 4 Max. transient thermal impedance Z thJA=f(t p) parameter: D =t p/T 103 limited by on-state resistance 10 s 102 0.5 0.2 10 0 100 s 0.1 0.05 10-1 10 ms Z thJA [K/W] 1 ms 101 0.02 0.01 I D [A] 100 ms 100 single pulse DC 10-2 10-1 10-3 1 10 100 10-2 10-6 10-5 10-4 10-3 10-2 t p [s] 10-1 100 101 102 V DS [V] Rev. 2.41 page 4 2009-11-19 BSS138W 5 Typ. output characteristics I D=f(V DS); T j=25 C parameter: V GS 0.6 V 10 V7 V5 V 4.5 6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 C parameter: V GS 10 2.9 V 3.2 V 3.5 V 4V 0.5 V4 8 0.4 0.3 V 3.5 R DS(on) [] 6 I D [A] 4.5 V V 3.2 4 5V 0.2 V 2.9 7V 0.1 2 10 V 0 0 1 2 3 4 5 0 0 0.1 0.2 0.3 0.4 0.5 V DS [V] I D [A] 7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max 8 Typ. forward transconductance g fs=f(I D); T j=25 C 0.6 0.4 0.5 0.35 0.3 0.4 0.25 0.3 g fs [S] 0 1 2 3 4 5 I D [A] 0.2 0.2 0.15 0.1 0.1 0.05 0 0 0.00 0.10 0.20 0.30 0.40 V GS [V] I D [A] Rev. 2.41 page 5 2009-11-19 BSS138W 9 Drain-source on-state resistance R DS(on)=f(T j); I D=0.2 A; V GS=10 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V DS=VGS; I D=26 A parameter: I D 8 2 1.6 6 %98 R DS(on) [] 4 %98 V GS(th) [V] 1.2 typ 0.8 2 typ %2 0.4 0 -60 -20 20 60 100 140 0 -60 -20 20 60 100 140 T j [C] T j [C] 11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz; Tj=25C 12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 102 100 25 C 150 C, 98% 25 C, 98% 150 C Ciss 10-1 C [pF] 101 Coss I F [A] 10-2 Crss 100 0 10 20 30 10-3 0 0.4 0.8 1.2 1.6 2 V DS [V] V SD [V] Rev. 2.41 page 6 2009-11-19 BSS138W 13 Typ. gate charge V GS=f(Q gate); I D=0.2 A pulsed parameter: V DD 12 70 14 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=250 A 30 V 10 65 8 48 V V GS [V] 12 V V BR(DSS) [V] 6 60 4 55 2 0 0 0.2 0.4 0.6 0.8 1 50 -60 -20 20 60 100 140 180 Q gate [nC] T j [C] Rev. 2.41 page 7 2009-11-19 BSS138W Package Outline: Footprint: Packaging: Rev. 2.41 page 8 2009-11-19 BSS138W Published by Infineon Technologies AG 81726 Munich, Germany (c) 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.41 page 9 2009-11-19 |
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